Room-temperature electron spin amplifier based on Ga(In)NAs alloys.
Identifieur interne : 000427 ( Main/Exploration ); précédent : 000426; suivant : 000428Room-temperature electron spin amplifier based on Ga(In)NAs alloys.
Auteurs : RBID : pubmed:23108727English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Alloys, Arsenicals, Gallium, Indium.
- Amplifiers, Electronic, Equipment Design, Equipment Failure Analysis, Materials Testing, Semiconductors, Spin Labels, Temperature.
Abstract
The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.
DOI: 10.1002/adma.201202597
PubMed: 23108727
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Room-temperature electron spin amplifier based on Ga(In)NAs alloys.</title><author><name sortKey="Puttisong, Yuttapoom" uniqKey="Puttisong Y">Yuttapoom Puttisong</name><affiliation wicri:level="1"><nlm:affiliation>Department of Physics, Chemistry and Biology, Linköping University, Sweden.</nlm:affiliation><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics, Chemistry and Biology, Linköping University</wicri:regionArea></affiliation></author><author><name sortKey="Buyanova, Irina A" uniqKey="Buyanova I">Irina A Buyanova</name></author><author><name sortKey="Ptak, Aaron J" uniqKey="Ptak A">Aaron J Ptak</name></author><author><name sortKey="Tu, Charles W" uniqKey="Tu C">Charles W Tu</name></author><author><name sortKey="Geelhaar, Lutz" uniqKey="Geelhaar L">Lutz Geelhaar</name></author><author><name sortKey="Riechert, Henning" uniqKey="Riechert H">Henning Riechert</name></author><author><name sortKey="Chen, Weimin M" uniqKey="Chen W">Weimin M Chen</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1002/adma.201202597</idno><idno type="RBID">pubmed:23108727</idno><idno type="pmid">23108727</idno><idno type="wicri:Area/Main/Corpus">000967</idno><idno type="wicri:Area/Main/Curation">000967</idno><idno type="wicri:Area/Main/Exploration">000427</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alloys (chemistry)</term><term>Amplifiers, Electronic</term><term>Arsenicals (chemistry)</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Gallium (chemistry)</term><term>Indium (chemistry)</term><term>Materials Testing</term><term>Semiconductors</term><term>Spin Labels</term><term>Temperature</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Alloys</term><term>Arsenicals</term><term>Gallium</term><term>Indium</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Amplifiers, Electronic</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Materials Testing</term><term>Semiconductors</term><term>Spin Labels</term><term>Temperature</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">23108727</PMID><DateCreated><Year>2013</Year><Month>02</Month><Day>05</Day></DateCreated><DateCompleted><Year>2013</Year><Month>07</Month><Day>16</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1521-4095</ISSN><JournalIssue CitedMedium="Internet"><Volume>25</Volume><Issue>5</Issue><PubDate><Year>2013</Year><Month>Feb</Month><Day>6</Day></PubDate></JournalIssue><Title>Advanced materials (Deerfield Beach, Fla.)</Title><ISOAbbreviation>Adv. Mater. Weinheim</ISOAbbreviation></Journal><ArticleTitle>Room-temperature electron spin amplifier based on Ga(In)NAs alloys.</ArticleTitle><Pagination><MedlinePgn>738-42</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1002/adma.201202597</ELocationID><Abstract><AbstractText>The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.</AbstractText><CopyrightInformation>Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Puttisong</LastName><ForeName>Yuttapoom</ForeName><Initials>Y</Initials><Affiliation>Department of Physics, Chemistry and Biology, Linköping University, Sweden.</Affiliation></Author><Author ValidYN="Y"><LastName>Buyanova</LastName><ForeName>Irina A</ForeName><Initials>IA</Initials></Author><Author ValidYN="Y"><LastName>Ptak</LastName><ForeName>Aaron J</ForeName><Initials>AJ</Initials></Author><Author ValidYN="Y"><LastName>Tu</LastName><ForeName>Charles W</ForeName><Initials>CW</Initials></Author><Author ValidYN="Y"><LastName>Geelhaar</LastName><ForeName>Lutz</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Riechert</LastName><ForeName>Henning</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>Chen</LastName><ForeName>Weimin M</ForeName><Initials>WM</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>10</Month><Day>26</Day></ArticleDate></Article><MedlineJournalInfo><Country>Germany</Country><MedlineTA>Adv Mater</MedlineTA><NlmUniqueID>9885358</NlmUniqueID><ISSNLinking>0935-9648</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Alloys</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Arsenicals</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Spin Labels</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-00-0</RegistryNumber><NameOfSubstance>gallium arsenide</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-11-3</RegistryNumber><NameOfSubstance>indium arsenide</NameOfSubstance></Chemical><Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber><NameOfSubstance>Gallium</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Alloys</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Amplifiers, Electronic</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Arsenicals</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Spin Labels</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Temperature</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2012</Year><Month>6</Month><Day>27</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>10</Month><Day>26</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>10</Month><Day>31</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>10</Month><Day>31</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>7</Month><Day>17</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1002/adma.201202597</ArticleId><ArticleId IdType="pubmed">23108727</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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